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GaAs/GeSn-MQW/Ge photodiode shows low dark current

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Research area:engineering-energy

What the study found

The study reports a lattice-mismatched GaAs/GeSn-multi-quantum well (MQW)/Ge n-i-p heterojunction photodiode made by semiconductor grafting. It found an atomically clean interface, no observable interdiffusion, and strong optoelectronic performance.

Why the authors say this matters

The authors conclude that this provides a new strategy for building lattice-mismatched optoelectronic heterojunctions. They also say the approach may be a broadly applicable platform for high-performance device integration without the usual strict lattice-matching requirement.

What the researchers tested

The researchers used semiconductor grafting to create a single-crystalline GaAs/GeSn-MQW/Ge n-i-p heterojunction photodiode. They also used STEM, or scanning transmission electron microscopy, to examine the GaAs/GeSn-MQW interface.

What worked and what didn't

The device showed a dark current density of 1.22 × 10^-7 A/cm^2 and spectral response from about 0.5 to 2 µm. It also showed photo responsivities of 0.85 A/W at 520 nm and 0.40 A/W at 1570 nm. Compared with an epitaxial reference device, dark current was reduced by more than five orders of magnitude, and responsivity increased by about 7× in the visible range and about 3× in the near-infrared.

What to keep in mind

The abstract does not describe detailed experimental limits, failure modes, or long-term stability. The reported findings are specific to the GaAs/GeSn-MQW/Ge system described here.

Key points

  • A GaAs/GeSn-multi-quantum well/Ge n-i-p photodiode was created through semiconductor grafting.
  • STEM showed an atomically clean GaAs/GeSn-MQW interface with no observable interdiffusion.
  • The device had a record-low dark current density of 1.22 × 10^-7 A/cm^2.
  • The spectral response extended from about 0.5 to 2 µm.
  • Responsivity reached 0.85 A/W at 520 nm and 0.40 A/W at 1570 nm.
  • Compared with an epitaxial reference device, dark current dropped by over five orders of magnitude.

Disclosure

Research title:
GaAs/GeSn-MQW/Ge photodiode shows low dark current
Authors:
Jie Zhou, Haibo Wang, Yang Liu, Yifu Guo, Alireza Abrand, Yang Liu, Jiarui Gong, Hieu D. Trinh, Po Rei Huang, Jianping Shen, Shengqiang Xu, Daniel Vincent, Samuel Haessly, Yi Lu, Munho Kim, Shui-Qing Yu, Parsian K. Mohseni, Guo‐En Chang, Zetian Mi, Kai Sun, Xiao Gong, Mikhail A. Kats, Zhenqiang Ma
Institutions:
Nanyang Technological University, National Chung Cheng University, National Chung Cheng University, National University of Singapore, National University of Singapore, National University of Singapore, National University of Singapore, Rochester Institute of Technology, Rochester Institute of Technology, The University of Texas at Dallas, University of Arkansas at Fayetteville, University of Michigan, University of Michigan, University of Michigan, University of Wisconsin–Madison, University of Wisconsin–Madison, University of Wisconsin–Madison, University of Wisconsin–Madison, University of Wisconsin–Madison, University of Wisconsin–Madison, University of Wisconsin–Madison, University of Wisconsin–Madison, University of Wisconsin–Madison
Publication date:
2026-04-25
DOI:
10.1002/adom.202502543
OpenAlex record:
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AI provenance: This post was generated by gpt-5.4-mini (OpenAI). The original authors did not write or review this post.

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